Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell

10.1109/TIFS.2015.2421481

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Bibliographic Details
Main Authors:	Zhang, Le, Fong, Xuanyao, Chang, Chip-Hong, Kong, Zhi Hui, Roy, Kaushik
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Computer Science, Theory & Methods Engineering, Electrical & Electronic Computer Science Engineering Automatic write-back bit alteration spin-transfer torque magnetic RAM (STT-MRAM) MemPUF physical unclonable function PHASE-CHANGE MEMORY MRAM PUFS
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156179
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-156179
record_format	dspace
spelling	sg-nus-scholar.10635-1561792024-11-13T06:46:44Z Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik ELECTRICAL AND COMPUTER ENGINEERING Dr Fong Xuanyao Science & Technology Technology Computer Science, Theory & Methods Engineering, Electrical & Electronic Computer Science Engineering Automatic write-back bit alteration spin-transfer torque magnetic RAM (STT-MRAM) MemPUF physical unclonable function PHASE-CHANGE MEMORY MRAM PUFS 10.1109/TIFS.2015.2421481 IEEE TRANSACTIONS ON INFORMATION FORENSICS AND SECURITY 10 8 1630-1642 2019-07-03T03:26:02Z 2019-07-03T03:26:02Z 2015-08-01 2019-07-03T03:06:03Z Article Zhang, Le, Fong, Xuanyao, Chang, Chip-Hong, Kong, Zhi Hui, Roy, Kaushik (2015-08-01). Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell. IEEE TRANSACTIONS ON INFORMATION FORENSICS AND SECURITY 10 (8) : 1630-1642. ScholarBank@NUS Repository. https://doi.org/10.1109/TIFS.2015.2421481 1556-6013 1556-6021 https://scholarbank.nus.edu.sg/handle/10635/156179 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Technology Computer Science, Theory & Methods Engineering, Electrical & Electronic Computer Science Engineering Automatic write-back bit alteration spin-transfer torque magnetic RAM (STT-MRAM) MemPUF physical unclonable function PHASE-CHANGE MEMORY MRAM PUFS
spellingShingle	Science & Technology Technology Computer Science, Theory & Methods Engineering, Electrical & Electronic Computer Science Engineering Automatic write-back bit alteration spin-transfer torque magnetic RAM (STT-MRAM) MemPUF physical unclonable function PHASE-CHANGE MEMORY MRAM PUFS Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell
description	10.1109/TIFS.2015.2421481
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik
format	Article
author	Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik
author_sort	Zhang, Le
title	Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell
title_short	Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell
title_full	Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell
title_fullStr	Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell
title_full_unstemmed	Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell
title_sort	highly reliable spin-transfer torque magnetic ram-based physical unclonable function with multi-response-bits per cell
publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/156179
_version_	1821209509143511040

Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell

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