Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell

• Main Authors: Zhang, Le, Fong, Xuanyao, Chang, Chip-Hong, Kong, Zhi Hui, Roy, Kaushik
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
• Subjects: Science & Technology; Technology; Computer Science, Theory & Methods; Engineering, Electrical & Electronic; Computer Science; Engineering; Automatic write-back; bit alteration; spin-transfer torque magnetic RAM (STT-MRAM) MemPUF; physical unclonable function; PHASE-CHANGE MEMORY; MRAM; PUFS
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/156179
• Institution: National University of Singapore

10.1109/TIFS.2015.2421481