Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

10.1109/TCAD.2015.2481793

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Bibliographic Details
Main Authors: Fong, Xuanyao, Kim, Yusung, Yogendra, Karthik, Fan, Deliang, Sengupta, Abhronil, Raghunathan, Anand, Roy, Kaushik
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:
Science & Technology
Technology
Computer Science, Hardware & Architecture
Computer Science, Interdisciplinary Applications
Engineering, Electrical & Electronic
Computer Science
Engineering
Boolean logic
magnetic tunnel junction (MTJ)
neuromorphic computing
non-Boolean logic
nonvolatile memory
post-CMOS
spin-transfer torque (STT)
spintronics
DOMAIN-WALL MOTION
MAGNETIC TUNNEL-JUNCTIONS
NONVOLATILE FLIP-FLOP
STT-MRAM
ORBIT TORQUES
INJECTION LOCKING
ELECTRIC-CURRENT
PHASE-LOCKING
DRIVEN
MAGNETORESISTANCE
Online Access:https://scholarbank.nus.edu.sg/handle/10635/156190
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/156190

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