Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

10.1109/TCAD.2015.2481793

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Bibliographic Details
Main Authors:	Fong, Xuanyao, Kim, Yusung, Yogendra, Karthik, Fan, Deliang, Sengupta, Abhronil, Raghunathan, Anand, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Computer Science, Hardware & Architecture Computer Science, Interdisciplinary Applications Engineering, Electrical & Electronic Computer Science Engineering Boolean logic magnetic tunnel junction (MTJ) neuromorphic computing non-Boolean logic nonvolatile memory post-CMOS spin-transfer torque (STT) spintronics DOMAIN-WALL MOTION MAGNETIC TUNNEL-JUNCTIONS NONVOLATILE FLIP-FLOP STT-MRAM ORBIT TORQUES INJECTION LOCKING ELECTRIC-CURRENT PHASE-LOCKING DRIVEN MAGNETORESISTANCE
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156190
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Institution:	National University of Singapore

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