Performance, power, and reliability tradeoffs of STT-RAM cell subject to architecture-level requirement

• Main Authors: Li, H., Wang, X., Ong, Z.-L., Wong, W.-F., Zhang, Y., Wang, P., Chen, Y.
• 其他作者: COMPUTER SCIENCE
• 格式: Conference or Workshop Item
• 出版: 2013
• 主題: MRAM; nonvolatility; spin-torque; spintronic
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/40264
• 機構: National University of Singapore

10.1109/TMAG.2011.2159262