Performance, power, and reliability tradeoffs of STT-RAM cell subject to architecture-level requirement

Performance, power, and reliability tradeoffs of STT-RAM cell subject to architecture-level requirement

10.1109/TMAG.2011.2159262

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Bibliographic Details
Main Authors: Li, H., Wang, X., Ong, Z.-L., Wong, W.-F., Zhang, Y., Wang, P., Chen, Y.
Other Authors: COMPUTER SCIENCE
Format: Conference or Workshop Item
Published: 2013
Subjects:
MRAM
nonvolatility
spin-torque
spintronic
Online Access:http://scholarbank.nus.edu.sg/handle/10635/40264
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Institution: National University of Singapore
Description
Summary:10.1109/TMAG.2011.2159262

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