ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm

ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm

10.23919/VLSITechnologyandCir57934.2023.10185261

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Bibliographic Details
Main Authors: Joydeep Basu, Sachin Taneja, Viveka Konandur Rajanna, Tianqi Wang, Massimo Bruno Alioto
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2023
Online Access:https://scholarbank.nus.edu.sg/handle/10635/244206
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/244206

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