ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm

10.23919/VLSITechnologyandCir57934.2023.10185261

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Bibliographic Details
Main Authors:	Joydeep Basu, Sachin Taneja, Viveka Konandur Rajanna, Tianqi Wang, Massimo Bruno Alioto
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2023
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/244206
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-244206
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spelling	sg-nus-scholar.10635-2442062024-11-15T13:11:01Z ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm Joydeep Basu Sachin Taneja Viveka Konandur Rajanna Tianqi Wang Massimo Bruno Alioto ELECTRICAL AND COMPUTER ENGINEERING 10.23919/VLSITechnologyandCir57934.2023.10185261 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 2023-08-15T01:17:47Z 2023-08-15T01:17:47Z 2023-06-11 Conference Paper Joydeep Basu, Sachin Taneja, Viveka Konandur Rajanna, Tianqi Wang, Massimo Bruno Alioto (2023-06-11). ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm. 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). ScholarBank@NUS Repository. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185261 978-4-86348-806-9 979-8-3503-4669-5 https://scholarbank.nus.edu.sg/handle/10635/244206 CC0 1.0 Universal http://creativecommons.org/publicdomain/zero/1.0/
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.23919/VLSITechnologyandCir57934.2023.10185261
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Joydeep Basu Sachin Taneja Viveka Konandur Rajanna Tianqi Wang Massimo Bruno Alioto
format	Conference or Workshop Item
author	Joydeep Basu Sachin Taneja Viveka Konandur Rajanna Tianqi Wang Massimo Bruno Alioto
spellingShingle	Joydeep Basu Sachin Taneja Viveka Konandur Rajanna Tianqi Wang Massimo Bruno Alioto ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm
author_sort	Joydeep Basu
title	ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm
title_short	ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm
title_full	ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm
title_fullStr	ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm
title_full_unstemmed	ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm
title_sort	ecc-less multi-level sram physically unclonable function and 127% puf-to-memory capacity ratio with no bitcell modification in 28nm
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/244206
_version_	1821210843063255040

ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm

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