Integration of TaOx-based resistive-switching element and GaAs diode

Integration of TaOx-based resistive-switching element and GaAs diode

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance rati...

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Bibliographic Details
Main Authors: Chi, Dong Zhi, Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Dalapati, G. K., Chia, Ching Kean
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/79340
http://hdl.handle.net/10220/19734
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Institution: Nanyang Technological University
Language: English
Description
Summary:We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.

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