Integration of TaOx-based resistive-switching element and GaAs diode

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance rati...

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Main Authors: Chi, Dong Zhi, Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Dalapati, G. K., Chia, Ching Kean
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/79340
http://hdl.handle.net/10220/19734
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-793402020-03-07T13:57:22Z Integration of TaOx-based resistive-switching element and GaAs diode Chi, Dong Zhi Xu, Z. Tong, X. Yoon, S. F. Yeo, Y. C. Dalapati, G. K. Chia, Ching Kean School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2014-06-13T03:00:30Z 2019-12-06T13:22:55Z 2014-06-13T03:00:30Z 2019-12-06T13:22:55Z 2013 2013 Journal Article Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Chia, C. K., Dalapati, G. K., et al. (2013). Integration of TaOx-based resistive-switching element and GaAs diode. APL Materials, 1(3), 032121-. 2166-532X https://hdl.handle.net/10356/79340 http://hdl.handle.net/10220/19734 10.1063/1.4820421 en APL materials © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Chi, Dong Zhi
Xu, Z.
Tong, X.
Yoon, S. F.
Yeo, Y. C.
Dalapati, G. K.
Chia, Ching Kean
Integration of TaOx-based resistive-switching element and GaAs diode
description We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Chi, Dong Zhi
Xu, Z.
Tong, X.
Yoon, S. F.
Yeo, Y. C.
Dalapati, G. K.
Chia, Ching Kean
format Article
author Chi, Dong Zhi
Xu, Z.
Tong, X.
Yoon, S. F.
Yeo, Y. C.
Dalapati, G. K.
Chia, Ching Kean
author_sort Chi, Dong Zhi
title Integration of TaOx-based resistive-switching element and GaAs diode
title_short Integration of TaOx-based resistive-switching element and GaAs diode
title_full Integration of TaOx-based resistive-switching element and GaAs diode
title_fullStr Integration of TaOx-based resistive-switching element and GaAs diode
title_full_unstemmed Integration of TaOx-based resistive-switching element and GaAs diode
title_sort integration of taox-based resistive-switching element and gaas diode
publishDate 2014
url https://hdl.handle.net/10356/79340
http://hdl.handle.net/10220/19734
_version_ 1681041352633090048