InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

• Main Authors: Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Sun, Xiao Wei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: Electrons; Current density; Multiple quantum wells; Light emitting diodes; Polarization
• Online Access: https://hdl.handle.net/10356/81199; http://hdl.handle.net/10220/39209
• Institution: Nanyang Technological University

In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However...