InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However...
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Main Authors: | Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Sun, Xiao Wei, Demir, Hilmi Volkan |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2015
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/81199 http://hdl.handle.net/10220/39209 |
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Institution: | Nanyang Technological University |
Language: | English |
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