Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator

Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator

The growth and characterization of (101¯1 ) semipolar GaN buffer, InGaN multiple quantum wells (MQWs), and light-emitting diode (LED) structure on patterned silicon-on-insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. The early growth stages of GaN result in co...

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Bibliographic Details
Main Authors: Wannous, Beatrice, Coulon, Pierre-Marie, Dupré, Ludovic, Rol, Fabian, Rochat, Névine, Zúñiga-Pérez, Jesús, Vennéguès, Philippe, Feuillet, Guy, Templier, François
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
Subjects:
Science::Physics
Light-Emitting Diodes
Silicon-on-Insulator Substrates
Online Access:https://hdl.handle.net/10356/172511
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/172511

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