Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator
The growth and characterization of (101¯1 ) semipolar GaN buffer, InGaN multiple quantum wells (MQWs), and light-emitting diode (LED) structure on patterned silicon-on-insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. The early growth stages of GaN result in co...
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| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/172511 |
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| Institution: | Nanyang Technological University |
| Language: | English |