Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes

• Main Authors: Iwan, S., Zhao, J. L., Tan, S. T., Fan, H. M., Sun, Xiao Wei, Bambang, S., Hikam, M.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: ZnO; Heterojunction; Rare earths; Electron impact excitation; Reverse-biased; LEDs
• Online Access: https://hdl.handle.net/10356/81333; http://hdl.handle.net/10220/40725
• Institution: Nanyang Technological University

We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were real...