Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes

Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes

We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were real...

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Bibliographic Details
Main Authors: Iwan, S., Zhao, J. L., Tan, S. T., Fan, H. M., Sun, Xiao Wei, Bambang, S., Hikam, M.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
ZnO
Heterojunction
Rare earths
Electron impact excitation
Reverse-biased
LEDs
Online Access:https://hdl.handle.net/10356/81333
http://hdl.handle.net/10220/40725
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Institution: Nanyang Technological University
Language: English
Description
Summary:We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were realized from Eu and Tm ions, respectively. The narrow line-width emissions are attributed to the transitions within the shielded 4f levels of the trivalent REs ions that resulting from direct electron impact excitation during reverse bias.

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