Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes
We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were real...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2016
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/81333 http://hdl.handle.net/10220/40725 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-81333 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-813332020-03-07T13:57:23Z Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes Iwan, S. Zhao, J. L. Tan, S. T. Fan, H. M. Sun, Xiao Wei Bambang, S. Hikam, M. School of Electrical and Electronic Engineering ZnO Heterojunction Rare earths Electron impact excitation Reverse-biased LEDs We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were realized from Eu and Tm ions, respectively. The narrow line-width emissions are attributed to the transitions within the shielded 4f levels of the trivalent REs ions that resulting from direct electron impact excitation during reverse bias. ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version 2016-06-20T06:13:56Z 2019-12-06T14:28:39Z 2016-06-20T06:13:56Z 2019-12-06T14:28:39Z 2014 Journal Article Iwan, S., Zhao, J., Tan, S., Bambang, S., Hikam, M., Fan, H., et al. (2015). Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes. Materials Science in Semiconductor Processing, 30, 263-266. 1369-8001 https://hdl.handle.net/10356/81333 http://hdl.handle.net/10220/40725 10.1016/j.mssp.2014.09.048 en Materials Science in Semiconductor Processing © 2014 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Materials Science in Semiconductor Processing, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.mssp.2014.09.048]. 15 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| topic |
ZnO Heterojunction Rare earths Electron impact excitation Reverse-biased LEDs |
| spellingShingle |
ZnO Heterojunction Rare earths Electron impact excitation Reverse-biased LEDs Iwan, S. Zhao, J. L. Tan, S. T. Fan, H. M. Sun, Xiao Wei Bambang, S. Hikam, M. Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes |
| description |
We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were realized from Eu and Tm ions, respectively. The narrow line-width emissions are attributed to the transitions within the shielded 4f levels of the trivalent REs ions that resulting from direct electron impact excitation during reverse bias. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Iwan, S. Zhao, J. L. Tan, S. T. Fan, H. M. Sun, Xiao Wei Bambang, S. Hikam, M. |
| format |
Article |
| author |
Iwan, S. Zhao, J. L. Tan, S. T. Fan, H. M. Sun, Xiao Wei Bambang, S. Hikam, M. |
| author_sort |
Iwan, S. |
| title |
Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes |
| title_short |
Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes |
| title_full |
Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes |
| title_fullStr |
Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes |
| title_full_unstemmed |
Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes |
| title_sort |
ion-dependent electroluminescence from trivalent rare-earth doped n-zno/p-si heterostructured light-emitting diodes |
| publishDate |
2016 |
| url |
https://hdl.handle.net/10356/81333 http://hdl.handle.net/10220/40725 |
| _version_ |
1681036278066315264 |