Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

• Main Authors: Ang, Diing Shenp, Zhang, H. Z., Yew, K. S., Wang, X. P.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Aluminium; Atomic layer deposition
• Online Access: https://hdl.handle.net/10356/81517; http://hdl.handle.net/10220/40833
• Institution: Nanyang Technological University

This study shows that a majority (70%) of TiN/HfOx/TiN devices exhibit failed complementary resistance switching (CRS) after forming. In conjunction with the consistent observation of a large non-polar reset loop in the first post-forming voltage-sweep measurement, it is proposed that breakdown of t...