MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrica...

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Bibliographic Details
Main Authors: Singh, Nandan, Ho, Charles Kin Fai, Tina, Guo Xin, Mohan, Manoj Kumar Chandra, Lee, Kenneth Eng Kian, Wang, Hong, Lam, Huy Quoc
Other Authors: Temasek Laboratories
Format: Article
Language:English
Published: 2016
Subjects:
Antireflection coatings
Device fabrications
Online Access:https://hdl.handle.net/10356/81535
http://hdl.handle.net/10220/39575
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/81535
http://hdl.handle.net/10220/39575

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