MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

• Main Authors: Singh, Nandan, Ho, Charles Kin Fai, Tina, Guo Xin, Mohan, Manoj Kumar Chandra, Lee, Kenneth Eng Kian, Wang, Hong, Lam, Huy Quoc
• Other Authors: Temasek Laboratories
• Format: Article
• Language: English
• Published: 2016
• Subjects: Antireflection coatings; Device fabrications
• Online Access: https://hdl.handle.net/10356/81535; http://hdl.handle.net/10220/39575
• Institution: Nanyang Technological University

We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrica...