A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression

In this paper, the 2-D electron gas density (ns) and Fermi level (Ef) analytical expressions as an explicit function of the terminal biases that covers the strong- and moderate-inversion and subthreshold regions and scalable with physical parameters are developed. It is validated by the comparison w...

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Main Authors: Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2016
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在線閱讀:https://hdl.handle.net/10356/81646
http://hdl.handle.net/10220/40922
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機構: Nanyang Technological University
語言: English