A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression
In this paper, the 2-D electron gas density (ns) and Fermi level (Ef) analytical expressions as an explicit function of the terminal biases that covers the strong- and moderate-inversion and subthreshold regions and scalable with physical parameters are developed. It is validated by the comparison w...
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Main Authors: | Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing |
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其他作者: | School of Electrical and Electronic Engineering |
格式: | Article |
語言: | English |
出版: |
2016
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主題: | |
在線閱讀: | https://hdl.handle.net/10356/81646 http://hdl.handle.net/10220/40922 |
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