An Epitaxial Ferroelectric Tunnel Junction on Silicon

• المؤلفون الرئيسيون: Li, Zhipeng, Guo, Xiao, Lu, Hui-Bin, Zhang, Zaoli, Song, Dongsheng, Cheng, Shaobo, Bosman, Michel, Zhu, Jing, Dong, Zhili, Zhu, Weiguang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Ferroelectric tunnel junction; Non-volatile memory; Tunneling electroresistance; Epitaxial growth; Pulsed laser deposition
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82373; http://hdl.handle.net/10220/39930

Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of int...