A silicon-nanowire memory driven by optical gradient force induced bistability

• Main Authors: Yang, Z. C., Gu, Y. D., Ng, Geok Ing, Ser, Wee, Kwong, D. L., Dong, Bin, Cai, H., Chin, Lip Ket, Huang, Jianguo, Liu, Ai Qun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Optical resonators
• Online Access: https://hdl.handle.net/10356/82448; http://hdl.handle.net/10220/40015
• Institution: Nanyang Technological University

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) an...