A silicon-nanowire memory driven by optical gradient force induced bistability
In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) an...
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sg-ntu-dr.10356-824482020-03-07T13:56:08Z A silicon-nanowire memory driven by optical gradient force induced bistability Yang, Z. C. Gu, Y. D. Ng, Geok Ing Ser, Wee Kwong, D. L. Dong, Bin Cai, H. Chin, Lip Ket Huang, Jianguo Liu, Ai Qun School of Electrical and Electronic Engineering Optical resonators In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits. ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Published version 2016-02-19T07:19:26Z 2019-12-06T14:55:51Z 2016-02-19T07:19:26Z 2019-12-06T14:55:51Z 2015 Journal Article Dong, B., Cai, H., Chin, L. K., Huang, J. G., Yang, Z. C., Gu, Y. D., et al. (2015). A silicon-nanowire memory driven by optical gradient force induced bistability. Applied Physics Letters, 107(26), 261111-. 0003-6951 https://hdl.handle.net/10356/82448 http://hdl.handle.net/10220/40015 10.1063/1.4939114 en Applied Physics Letters © 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4939114]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
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Optical resonators |
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Optical resonators Yang, Z. C. Gu, Y. D. Ng, Geok Ing Ser, Wee Kwong, D. L. Dong, Bin Cai, H. Chin, Lip Ket Huang, Jianguo Liu, Ai Qun A silicon-nanowire memory driven by optical gradient force induced bistability |
| description |
In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Yang, Z. C. Gu, Y. D. Ng, Geok Ing Ser, Wee Kwong, D. L. Dong, Bin Cai, H. Chin, Lip Ket Huang, Jianguo Liu, Ai Qun |
| format |
Article |
| author |
Yang, Z. C. Gu, Y. D. Ng, Geok Ing Ser, Wee Kwong, D. L. Dong, Bin Cai, H. Chin, Lip Ket Huang, Jianguo Liu, Ai Qun |
| author_sort |
Yang, Z. C. |
| title |
A silicon-nanowire memory driven by optical gradient force induced bistability |
| title_short |
A silicon-nanowire memory driven by optical gradient force induced bistability |
| title_full |
A silicon-nanowire memory driven by optical gradient force induced bistability |
| title_fullStr |
A silicon-nanowire memory driven by optical gradient force induced bistability |
| title_full_unstemmed |
A silicon-nanowire memory driven by optical gradient force induced bistability |
| title_sort |
silicon-nanowire memory driven by optical gradient force induced bistability |
| publishDate |
2016 |
| url |
https://hdl.handle.net/10356/82448 http://hdl.handle.net/10220/40015 |
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1681040693672280064 |