Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation

• Main Authors: Zhu, Minmin, Wu, Jing, Du, Zehui, Tsang, Siuhon, Teo, Edwin Hang Tong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: P-N Junctions; Engineering::Electrical and electronic engineering; Graphene
• Online Access: https://hdl.handle.net/10356/82623; http://hdl.handle.net/10220/49074
• Institution: Nanyang Technological University

High-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high an...