Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation

High-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high an...

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Bibliographic Details
Main Authors: Zhu, Minmin, Wu, Jing, Du, Zehui, Tsang, Siuhon, Teo, Edwin Hang Tong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Online Access:https://hdl.handle.net/10356/82623
http://hdl.handle.net/10220/49074
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Institution: Nanyang Technological University
Language: English
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