Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation
High-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high an...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/82623 http://hdl.handle.net/10220/49074 |
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| Institution: | Nanyang Technological University |
| Language: | English |