Transistor/gate level reliability modeling

• 主要作者: Liu, Xu
• 其他作者: Zhou Xing
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2019
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/82933; http://hdl.handle.net/10220/47536
• 機構: Nanyang Technological University

The development of CMOS technology is a double-edged sword: for one thing, it provides faster,lowerpower-consuming,and smaller-size devices; for another,reliability issues such as Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) become severer, resulting in device/gate pe...