High-speed silicon modulators for the 2 μm wavelength band

• Main Authors: Cao, Wei, Hagan, David, Thomson, David J., Nedeljkovic, Milos, Knights, Andy, Wang, Junjia, Gardes, Frederic, Zhang, Weiwei, Liu, Shenghao, Li, Ke, Xin, Guo, Wang, Wanjun, Wang, Hong, Reed, Graham T., Mashanovich, Goran Z., Littlejohns, Callum George, Shaif-Ul Alam, Mohamed Said Rouifed
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Silicon Modulators; Wavelength Band; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/82959; http://hdl.handle.net/10220/47618
• Institution: Nanyang Technological University

The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interfero...