High-speed silicon modulators for the 2 μm wavelength band

• المؤلفون الرئيسيون: Cao, Wei, Hagan, David, Thomson, David J., Nedeljkovic, Milos, Knights, Andy, Wang, Junjia, Gardes, Frederic, Zhang, Weiwei, Liu, Shenghao, Li, Ke, Xin, Guo, Wang, Wanjun, Wang, Hong, Reed, Graham T., Mashanovich, Goran Z., Littlejohns, Callum George, Shaif-Ul Alam, Mohamed Said Rouifed
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Silicon Modulators; Wavelength Band; DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82959; http://hdl.handle.net/10220/47618
• المؤسسة: Nanyang Technological University

The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interfero...