Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application
III-Nitride materials have gathered enormous attention and undergone fast development, due to superior properties such as wide band gap, high stability, high electron motilities, high break down voltage and sensitivity to ultraviolet light. GaN ultraviolet (UV) detector can be used in fire detecting...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2019
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| 在線閱讀: | https://hdl.handle.net/10356/83264 http://hdl.handle.net/10220/48009 |
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| 機構: | Nanyang Technological University |
| 語言: | English |