Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application

• المؤلف الرئيسي: Zheng, Yi
• مؤلفون آخرون: K. Radhakrishnan
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2019
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83264; http://hdl.handle.net/10220/48009
• المؤسسة: Nanyang Technological University

III-Nitride materials have gathered enormous attention and undergone fast development, due to superior properties such as wide band gap, high stability, high electron motilities, high break down voltage and sensitivity to ultraviolet light. GaN ultraviolet (UV) detector can be used in fire detecting...