Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and A...

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Bibliographic Details
Main Authors: Wu, Dan, Tang, Xiaohong, Wang, Kai, Olivier, Aurelien, Li, Xianqiang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2017
Subjects:
Semiconductor growth
Gold
Online Access:https://hdl.handle.net/10356/83610
http://hdl.handle.net/10220/42703
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/83610
http://hdl.handle.net/10220/42703

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