Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

• المؤلفون الرئيسيون: Wu, Dan, Tang, Xiaohong, Wang, Kai, Olivier, Aurelien, Li, Xianqiang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Semiconductor growth; Gold
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83610; http://hdl.handle.net/10220/42703

After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and A...