Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and A...

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書目詳細資料
Main Authors:	Wu, Dan, Tang, Xiaohong, Wang, Kai, Olivier, Aurelien, Li, Xianqiang
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2017
主題:	Semiconductor growth Gold
在線閱讀:	https://hdl.handle.net/10356/83610 http://hdl.handle.net/10220/42703
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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