Thermal Characteristics of InP-Al2O3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration

Thermal characteristics of InP-Al2O3/Si bonding for photonic integrated circuits application have been reported in this work. This paper firstly demonstrates low temperature heterogeneous direct bonding assisted by a thin layer of high-κ dielectric material (Al2O3). The InP samples with epitaxial gr...

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Bibliographic Details
Main Authors: Fan, J., Anantha, P., Liu, C. Y., Bergkvist, M., Wang, H., Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
INP
Online Access:https://hdl.handle.net/10356/83856
http://hdl.handle.net/10220/41485
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Institution: Nanyang Technological University
Language: English
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