Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation

• Main Authors: Tan, Chuan Seng, Anantha, P.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/102017; http://hdl.handle.net/10220/18857
• Institution: Nanyang Technological University

A direct chip to wafer bonding of indium phosphide (InP) onto silicon using Al2O3 as the intermediate homogenous bonding layer is reported. Intermediate film thickness is varied from 5 to 20 nm and the UV/O3 activation time is optimized to result in minimal surface roughness and contact angle requir...