Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2019
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/87323 http://hdl.handle.net/10220/48206 |
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Institution: | Nanyang Technological University |
Language: | English |