Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding

Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration...

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Bibliographic Details
Main Authors: Lin, Yiding, Anantha, P., Lee, Kwang Hong, Chua, Shen Lin, Shang, Lingru, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Online Access:https://hdl.handle.net/10356/87323
http://hdl.handle.net/10220/48206
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Institution: Nanyang Technological University
Language: English