Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding

• Main Authors: Lin, Yiding, Anantha, P., Lee, Kwang Hong, Chua, Shen Lin, Shang, Lingru, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: DRNTU::Engineering::Electrical and electronic engineering; Homogeneous Direct Bonding; Hybrid Integration
• Online Access: https://hdl.handle.net/10356/87323; http://hdl.handle.net/10220/48206
• Institution: Nanyang Technological University

Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration...