Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation
A direct chip to wafer bonding of indium phosphide (InP) onto silicon using Al2O3 as the intermediate homogenous bonding layer is reported. Intermediate film thickness is varied from 5 to 20 nm and the UV/O3 activation time is optimized to result in minimal surface roughness and contact angle requir...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102017 http://hdl.handle.net/10220/18857 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | A direct chip to wafer bonding of indium phosphide (InP) onto silicon using Al2O3 as the intermediate homogenous bonding layer is reported. Intermediate film thickness is varied from 5 to 20 nm and the UV/O3 activation time is optimized to result in minimal surface roughness and contact angle required for effective direct wafer bonding. TEM characterization of the interface reveals a homogeneously fused Al2O3 layer. In addition Al2O3 is shown to best emulate the thermal characteristics of direct InP/Si bonding as compared to using SiO2 as the interfacial bonding layer. Therefore Al2O3 is recognized be a highly competent interfacial layer for chip to wafer bonding for integrated photonic application. |
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