Thermal Characteristics of InP-Al2O3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration

• المؤلفون الرئيسيون: Fan, J., Anantha, P., Liu, C. Y., Bergkvist, M., Wang, H., Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Optical Interconnects; INP
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83856; http://hdl.handle.net/10220/41485

Thermal characteristics of InP-Al2O3/Si bonding for photonic integrated circuits application have been reported in this work. This paper firstly demonstrates low temperature heterogeneous direct bonding assisted by a thin layer of high-κ dielectric material (Al2O3). The InP samples with epitaxial gr...