Thermal Characteristics of InP-Al2O3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration
Thermal characteristics of InP-Al2O3/Si bonding for photonic integrated circuits application have been reported in this work. This paper firstly demonstrates low temperature heterogeneous direct bonding assisted by a thin layer of high-κ dielectric material (Al2O3). The InP samples with epitaxial gr...
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Main Authors: | , , , , , |
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格式: | Article |
語言: | English |
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2016
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在線閱讀: | https://hdl.handle.net/10356/83856 http://hdl.handle.net/10220/41485 |
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