Thermal Characteristics of InP-Al2O3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration

Thermal characteristics of InP-Al2O3/Si bonding for photonic integrated circuits application have been reported in this work. This paper firstly demonstrates low temperature heterogeneous direct bonding assisted by a thin layer of high-κ dielectric material (Al2O3). The InP samples with epitaxial gr...

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書目詳細資料
Main Authors: Fan, J., Anantha, P., Liu, C. Y., Bergkvist, M., Wang, H., Tan, Chuan Seng
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2016
主題:
INP
在線閱讀:https://hdl.handle.net/10356/83856
http://hdl.handle.net/10220/41485
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