Localization-driven metal-insulator transition in epitaxial hole-doped Nd 1−x Sr x NiO 3 ultrathin films

• المؤلفون الرئيسيون: Wang, Le, Chang, Lei, Yin, Xinmao, Rusydi, Andrivo, You, Lu, Zhou, Yang, Fang, Liang, Wang, Junling
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Nickelates thin films; Metal-insulator transition
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84695; http://hdl.handle.net/10220/41950
• المؤسسة: Nanyang Technological University

Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristi...