Localization-driven metal-insulator transition in epitaxial hole-doped Nd 1−x Sr x NiO 3 ultrathin films
Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristi...
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/84695 http://hdl.handle.net/10220/41950 |
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| Institution: | Nanyang Technological University |
| Language: | English |