Localization-driven metal-insulator transition in epitaxial hole-doped Nd 1−x Sr x NiO 3 ultrathin films

Localization-driven metal-insulator transition in epitaxial hole-doped Nd 1−x Sr x NiO 3 ultrathin films

Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristi...

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書目詳細資料
Main Authors:	Wang, Le, Chang, Lei, Yin, Xinmao, Rusydi, Andrivo, You, Lu, Zhou, Yang, Fang, Liang, Wang, Junling
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2016
主題:	Nickelates thin films Metal-insulator transition
在線閱讀:	https://hdl.handle.net/10356/84695 http://hdl.handle.net/10220/41950
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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