Design 1.3 um GaAsSbN/GaAs quantum well laser diode

A laser diode is a laser where the active medium is a semiconductor similar to that found in a light-emitted diode. [4th Award]

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Bibliographic Details
Main Author: Dong, Bin
Other Authors: Fan Weijun
Format: Student Research Poster
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/84816
http://hdl.handle.net/10220/9102
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-848162020-09-27T20:30:19Z Design 1.3 um GaAsSbN/GaAs quantum well laser diode Dong, Bin Fan Weijun School of Electrical and Electronic Engineering A laser diode is a laser where the active medium is a semiconductor similar to that found in a light-emitted diode. [4th Award] 2013-02-04T03:01:36Z 2019-12-06T15:51:32Z 2013-02-04T03:01:36Z 2019-12-06T15:51:32Z 2007 2007 Student Research Poster Dong, B. (2007, March). Design 1.3 um GaAsSbN/GaAs quantum well laser diode. Presented at Discover URECA @ NTU poster exhibition and competition, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/84816 http://hdl.handle.net/10220/9102 en © 2007 The Author(s). application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description A laser diode is a laser where the active medium is a semiconductor similar to that found in a light-emitted diode. [4th Award]
author2 Fan Weijun
author_facet Fan Weijun
Dong, Bin
format Student Research Poster
author Dong, Bin
spellingShingle Dong, Bin
Design 1.3 um GaAsSbN/GaAs quantum well laser diode
author_sort Dong, Bin
title Design 1.3 um GaAsSbN/GaAs quantum well laser diode
title_short Design 1.3 um GaAsSbN/GaAs quantum well laser diode
title_full Design 1.3 um GaAsSbN/GaAs quantum well laser diode
title_fullStr Design 1.3 um GaAsSbN/GaAs quantum well laser diode
title_full_unstemmed Design 1.3 um GaAsSbN/GaAs quantum well laser diode
title_sort design 1.3 um gaassbn/gaas quantum well laser diode
publishDate 2013
url https://hdl.handle.net/10356/84816
http://hdl.handle.net/10220/9102
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