The study of the charge collection of the normal-collector configuration
Charge collection is one of the crucial processes to collect the induced current when a semiconductor sample is subjected to some external excitations such as the electron or photon beams. The charge collection probability is the basis in the study of this induced current particularly in the field o...
Saved in:
Main Authors: | , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/85076 http://hdl.handle.net/10220/10555 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-85076 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-850762020-03-07T13:57:25Z The study of the charge collection of the normal-collector configuration Tan, Chee Chin. Ong, Vincent K. S. Radhakrishnan, K. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Charge collection is one of the crucial processes to collect the induced current when a semiconductor sample is subjected to some external excitations such as the electron or photon beams. The charge collection probability is the basis in the study of this induced current particularly in the field of photonic devices, photovoltaic cells as well as in the characterization of semiconductor materials and devices. In this paper, the analytical expressions for the charge collection probability of the finite-dimension normal-collector configuration, with and without surface recombination at the free surfaces are presented. An excellent agreement has been found between the charge collection probability profiles computed using the presently derived analytical expressions and those obtained using a device simulator. The results have been used to study the effects of the various physical parameters on the charge collection probability. These analytical expressions are expected to enhance our understanding of the charge collection process. 2013-06-24T08:24:44Z 2019-12-06T15:56:33Z 2013-06-24T08:24:44Z 2019-12-06T15:56:33Z 2012 2012 Journal Article Tan, C. C., Ong, V. K. S., & Radhakrishnan, K. (2012). The study of the charge collection of the normal-collector configuration. Progress in Photovoltaics: Research and Applications. 1062-7995 https://hdl.handle.net/10356/85076 http://hdl.handle.net/10220/10555 10.1002/pip.2190 en Progress in photovoltaics : research and applications © 2012 John Wiley & Sons, Ltd. |
institution |
Nanyang Technological University |
building |
NTU Library |
country |
Singapore |
collection |
DR-NTU |
language |
English |
topic |
DRNTU::Engineering::Electrical and electronic engineering |
spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering Tan, Chee Chin. Ong, Vincent K. S. Radhakrishnan, K. The study of the charge collection of the normal-collector configuration |
description |
Charge collection is one of the crucial processes to collect the induced current when a semiconductor sample is subjected to some external excitations such as the electron or photon beams. The charge collection probability is the basis in the study of this induced current particularly in the field of photonic devices, photovoltaic cells as well as in the characterization of semiconductor materials and devices. In this paper, the analytical expressions for the charge collection probability of the finite-dimension normal-collector configuration, with and without surface recombination at the free surfaces are presented. An excellent agreement has been found between the charge collection probability profiles computed using the presently derived analytical expressions and those obtained using a device simulator. The results have been used to study the effects of the various physical parameters on the charge collection probability. These analytical expressions are expected to enhance our understanding of the charge collection process. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Tan, Chee Chin. Ong, Vincent K. S. Radhakrishnan, K. |
format |
Article |
author |
Tan, Chee Chin. Ong, Vincent K. S. Radhakrishnan, K. |
author_sort |
Tan, Chee Chin. |
title |
The study of the charge collection of the normal-collector configuration |
title_short |
The study of the charge collection of the normal-collector configuration |
title_full |
The study of the charge collection of the normal-collector configuration |
title_fullStr |
The study of the charge collection of the normal-collector configuration |
title_full_unstemmed |
The study of the charge collection of the normal-collector configuration |
title_sort |
study of the charge collection of the normal-collector configuration |
publishDate |
2013 |
url |
https://hdl.handle.net/10356/85076 http://hdl.handle.net/10220/10555 |
_version_ |
1681040405475360768 |