Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches
This work reports the characterization of antimony doping effects on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring...
Saved in:
Main Authors: | , , , , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
|
Online Access: | https://hdl.handle.net/10356/85273 http://hdl.handle.net/10220/10579 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Summary: | This work reports the characterization of antimony doping effects on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude–Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire–nanowire junction barriers. |
---|