Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches

• المؤلفون الرئيسيون: Liu, Hongwei, Sun, Cheng, Lu, Junpeng, Zheng, Minrui, Lim, Kim Yong, Mathews, Nripan, Mhaisalkar, Subodh Gautam, Tang, Sing Hai, Zhang, Xinhai, Sow, Chorng Haur
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85273; http://hdl.handle.net/10220/10579

This work reports the characterization of antimony doping effects on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring...